| PART |
Description |
Maker |
| TG110-E050N5 TG110-E055N5 TG110-E120N5 TG110-E125N |
Extended Temperature Range, E-Ultra?/a> 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra⑩ 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range/ E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
DIODE ZENER DUAL ISOLATED 200mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-363 3K/REEL
Extended Temperature Range, E-Ultra10/100BASE-TX SOIC-16 Magnetic Modules
|
List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Electronic Theatre Controls, Inc.
|
| KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| VCAS06AG18120Y VCAS04AG183R0Y VCAS06AG183R0Y VCAS0 |
AntennaGuard Automotive Series Multilayer Varistors for Automotive Applications
|
AVX Corporation
|
| BLM18PG300SH1D |
For Automotive Chip Ferrite Bead for Automotive
|
Murata Manufacturing Co., Ltd.
|
| K4E16708112D K4E160811D K4E160811D-B K4E160811D-F |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
|
Samsung Electronic
|
| K4E160411D K4E160412D K4E170411D K4E170412D K4E167 |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| PEF81912-FV1.3 PEF81913-FV1.3 PEF81912-HV1.3 PEF81 |
Q-SMINT?IX 2B1Q Second Gen. Modular ISDN NT (Intelligent eXtended)
Q-SMINTIX (2B1Q Second Gen. Modular I...
2B1Q Second Generation Modular ISDN NT (Intelligent eXtended)
|
Infineon Technologies AG
|
| ADV7194KST ADV7194 |
Professional Extended-10⑩ Video Encoder with 54 MHz Oversampling
Professional Extended-10 Video Encoder with 54 MHz Oversampling
|
AD[Analog Devices]
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| PCF84C85A PCF84C85AP PCF84C85AT |
Microcontroller with extended I/O
|
PHILIPS[Philips Semiconductors]
|
